Search results for "Axial growth"
showing 10 items of 11 documents
Geometric analysis of intrusive growth of wood fibres in Robinia pseudoacacia
2018
ABSTRACT All cell types of the secondary xylem arise from the meristematic cells (initials) of the vascular cambium and grow under mechanical constraints emerging from the circular-symmetrical geometry that characterises many tree trunks. The course of intrusive growth of cambial initials has been elucidated, but is yet to be described in the case of xylem fibres. This study explains the geometry of intrusive growth of the secondary xylem fibres in the trunk of Robinia pseudoacacia. Long series of serial semi-thin sections of the vascular cambium and the differentiating secondary xylem were analysed. Since fibres grow in close vicinity to expanding cells of the derivatives of the vascular c…
Faceting and structural anisotropy of nanopatterned CdO(110) layers
2005
CdO(110) layers with a self-organized surface structure have been grown on (10math0) sapphire (m plane) substrates by metal-organic vapor phase epitaxy. The epitaxial relationships between layer and substrate have been determined and a crystallographic model that accounts for the CdO in-plane orientation, which results in a reduced lattice mismatch when the CdO[001] direction is perpendicular to the sapphire c axis, has been proposed. Although the measured lattice parameters indicate that the layers are almost fully relaxed, an anisotropic mosaicity is detected with symmetrical rocking curves attaining minimum values when measured along the CdO[math10] direction. The layer morphology consis…
Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers
2008
http://link.aip.org/link/?JAPIAU/103/056108/1
Epitaxial Thin-Film vs Single Crystal Growth of 2D Hofmann-Type Iron(II) Materials: A Comparative Assessment of their Bi-Stable Spin Crossover Proper…
2020
Integration of the ON-OFF cooperative spin crossover (SCO) properties of FeII coordination polymers as components of electronic and/or spintronic devices is currently an area of great interest for potential applications. This requires the selection and growth of thin films of the appropriate material onto selected substrates. In this context, two new series of cooperative SCO two-dimensional FeII coordination polymers of the Hofmann-type formulated {FeII(Pym)2[MII(CN)4]·xH2O}n and {FeII(Isoq)2[MII(CN)4]}n (Pym = pyrimidine, Isoq = isoquinoline; MII = Ni, Pd, Pt) have been synthesized, characterized, and the corresponding Pt derivatives selected for fabrication of thin films by liquid-phase …
Structural defects in Hg1−xCdxI2 layers grown on CdTe substrates by vapor phase epitaxy
1997
Hg1−xCdxI2 20–25-μm-thick layers with a uniform composition in the range of x = 0.1–0.2 were grown on CdTe substrates by vapor phase epitaxy (VPE). The growth was carried out using an α-HgI2 polycrystalline source at 200 °C and in the time range of 30–100 h. The layers were studied by scanning electron microscopy (SEM) and high resolution synchrotron x-ray topography (SXRT). The SEM and SXRT images of Hg1−xCdxI2 VPE layers allow one to identify the defects affecting the layer structure. The two main types of structural defects in the layers are subgrain boundaries and densely spaced striations similar to those referred generally to as vapor grown HgI2 bulk crystals. The effect of the growth…
Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates
2011
3 figuras, 3 páginas.
Growth and optical characterization of indirect-gap AlxGa1−xAs alloys
1999
Nonintentionally doped AlxGa1−xAs layers with 0.38 x 0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when gro…
Structural characterization of a-plane Zn1−xCdxO (0 < x <0.085) thin films grown by metal-organic vapor phase epitaxy.
2006
Zn1−xCdxO(11math0) films have been grown on (01math2) sapphire (r–plane) substrates by metal-organic vapor phase epitaxy. A 800-nm-thick ZnO buffer, deposited prior to the alloy growth, helps to prevent the formation of pure CdO. A maximum uniform Cd incorporation of 8.5 at. % has been determined by Rutherford backscattering spectrometry. Higher Cd contents lead to the coexistence of Zn1−xCdxO alloys of different compositions within the same film. The near band-edge photoluminescence emission shifts gradually to lower energies as Cd is incorporated and reaches 2.93 eV for the highest Cd concentration (8.5 at. %). The lattice deformation, due to Cd incorporation, has been described using a n…
P-Type Doping of 4H-SiC for Integrated Bipolar and Unipolar Devices
2015
International audience; P-type 4H-SiC layers formed by ion implantation need high temperature processes, which generate surface roughness, losing and incomplete activation of dopants. Due to dopant redistribution and channeling effect, it is difficult to predict the depth of the formed junctions. Vapor-Liquid-Solid (VLS) selective epitaxy is an alternative method to obtain locally highly doped p-type layers in the 1020 cm-3 range or more. The depth of this p-type layers or regions is accurately controlled by the initial Reactive-Ion-Etching (RIE) of the SiC. Lateral Junction Field Effect Transistor (JFET) devices are fabricated by integrating p-type layers created by Al ion implantation or …